Fds 6298
Transcript of Fds 6298
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2007 Fairchild Semiconductor Corporation FDS6298 Rev. C1 ( W)
FDS629830V N-Channel Fast Switching PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized forlow gate charge, low RDS(ON)and fast switching speed.
Applications
Control Switch for DC-DC Buck converters
Notebook Vcore
Telecom / Networking Point of Load
Features
13 A, 30 V. RDS(ON)= 9 m@ VGS= 10 V
RDS(ON)= 12 m@ VGS= 4.5 V
Low gate charge (10nC @ VGS=5V)
Very low Miller Charge (3nC)
Low Rg (1 Ohm)
ROHS Compliant
S
D
SS
SO-8
DD
D
G
DD
DD
SS
SG
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage 20 V
Drain Current Continuous (Note 1a) 13ID
Pulsed 50A
Power Dissipation for Single Operation (Note 1a) 3.0PD
Power Dissipation for Single Operation (Note 1b) 1.2W
EAS Single Pulse Avalanche Energy (Note 3) 181 mJ
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C
Thermal CharacteristicsRJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W
RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W
Package Marking and Ordering InformationDevice Marking Device Reel Size Tape width Quantity
FDS6298 FDS6298 13 12mm 2500 units
FDS629830VN-C
hannelFastSwitchin
Pow
erTrenchMOSFET
m
Apri l 2007
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FDS6298 Rev. C1 (W)
Electrical Characteristics TA= 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS DrainSource Breakdown Voltage VGS= 0 V, ID= 250 A 30 - - V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID= 250 A, Referenced to 25C - 30 - mV/C
IDSS Zero Gate Voltage Drain Current VDS= 24 V, VGS= 0 V - - 1 A
IGSS GateBody Leakage VGS= 20 V, VDS= 0 V - - 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250 A 1 1.7 3 V
VGS(th)TJ
Gate Threshold VoltageTemperature Coefficient
ID= 250 A, Referenced to 25C - 5 - mV/C
RDS(ON)Static DrainSourceOnResistance
VGS= 10 V, ID= 13 A
VGS= 4.5 V, ID= 12 A
VGS= 10 V, ID= 13 A, TJ=125C
-
7.4
9.4
11
9
12
15
m
gFS Forward Transconductance VDS= 10 V, ID= 13 A - 58 - S
Dynamic Characteristics
Ciss Input Capacitance - 1108 - pF
Coss Output Capacitance - 310 - pF
Crss Reverse Transfer Capacitance
VDS= 15 V, VGS= 0 V,f = 1.0 MHz
- 109 - pF
RG Gate Resistance VGS= 15 mV, f = 1.0 MHz 0.3 1 1.7
Switching Characteristics (Note 2)
td(on) TurnOn Delay Time - 11 20 ns
tr TurnOn Rise Time - 5 10 ns
td(off) TurnOff Delay Time - 27 43 ns
tf TurnOff Fall Time
VDD= 15 V, ID= 1 A,
VGS= 10 V, RGEN= 6
- 7 14 ns
Qg Total Gate Charge - 10 14 nC
Qgs GateSource Charge - 3 - nC
Qgd GateDrain Charge
VDS= 15 V, ID= 13 A,VGS= 5 V
- 3 - nC
DrainSource Diode Characteristics
VSDDrainSource Diode ForwardVoltage
VGS= 0 V, IS= 2.1 A (Note 2) - 0.74 1.2 V
trr Diode Reverse Recovery Time IF= 13 A, dIF/dt = 100 A/s - 27 - ns
Qrr Diode Reverse Recovery Charge - 13 - nC
Notes:
1. RJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC
is guaranteed by design while RCA
is determined by the user's board design.
a) 50C/W when mountedon a 1in
2pad of 2 oz
copper
b) 125C/W when mounted on aminimum pad.
Scale 1 : 1 on letter size paper
2.Test: Pulse Width < 300s, Duty Cycle < 2.0%3.Starting TJ = 25C, L = 3mH, IAS= 11A, VDD= 30V, VGS= 10V
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FDS6298 Rev. C1 (W)
Typical Characteristics
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID,DRAIN
CURRENT(A)
3.0V
4.5V
3.5.V
4.0VVGS= 10V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 10 20 30 40 50 60 70 80
ID, DRAIN CURRENT (A)
RDS(ON),NORMALIZE
D
DRAIN-SOURCEON-RESISTANCE
VGS= 3.0V
4.0V
5.0V4.5V
10V6.0V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON),NORMALIZED
DRAIN-SOURCEON-RESISTANCE
ID= 13A
VGS= 10V
0.004
0.008
0.012
0.016
0.02
0.024
0.028
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON),ON-RESISTANCE(OHM)
ID= 6.5A
TA= 125oC
TA= 25oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
70
80
1.5 2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
ID,DRAIN
CURRENT(A) TA= -55
oC 25oC
125o
VDS= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS,REVERSEDRAIN
CURRENT(A)
TA = 125oC
25oC
-55oC
VGS= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.
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-ChannelFastSwitchin
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FDS6298 Rev. C1 (W)
Typical Characteristics
0
2
4
6
8
10
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
VGS,GATE-SOURCEVOLTA
GE(V) ID= 13A VDS= 10V
20V
15V
0
300
600
900
1200
1500
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE(pF)
CISS
CRSS
COSS
f = 1MHzVGS= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID,DRAIN
CURRENT(A)
DC10s
1s
100ms
RDS(ON)LIMIT
VGS= 10V
SINGLE PULSE
RJA= 125oC/W
TA= 25oC
10ms1ms
100s
1
10
100
0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE (mS)
IAS,AVALANCHE
CURRENT(A)
25
125
Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive SwitchingCapability
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100t1, TIME (sec)
P(pk),PEAKTRANSIENTPOWER(W) SINGLE PULSE
RJA= 125C/W
TA= 25C
Figure 11. Single Pulse Maximum Power Dissipation.
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Typical Characteristics
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t),NORMALIZEDEFFE
CTIVE
TRANSIENTTHERMALRES
ISTANCE
RJA(t) = r(t) * RJA
RJA= 125 C/W
TJ- TA= P * RJA(t)
Duty Cycle, D = t1/ t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.Transient thermal response will change depending on the circuit board design.
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2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I26